Modeling on Monolithic Integration Structure of AlGaN/InGaN/GaN High Electron Mobility Transistors and LEDs: 2DEG Density and Radiative Recombination

The monolithic integration structure of the AlGaN/InGaN/GaN−based high electron mobility transistor (HEMT) and light−emitting diode (LED) is attractive in LED lighting visible light communication (VLC) systems owing to reduction parasitic elements by removing metal interconnections. Due band−offset polarization effect, inserting a certain thickness InGaN layer into traditional AlGaN/GaN single heterostructure increases density 2DEG nearly twice original. At same time, quantum well can also improve luminous efficiency LED. In this paper, physical models two−dimensional gas (2DEG) densities threshold voltage AlGaN/InGaN/GaN HEMTs are established verified with experimental results from literature. According calculation results, HEMT 1.47 × 1013 cm−2, hole (2DHG) 0.55 when Al% = 0.2, In% 0.1, dAlGaN 20 nm. addition, model for radiative recombination rate HEMT−LED proposed. This work provides design guideline its application systems.